2SK2549

The 2SK2549 is a kind of field effect transistor. It is silicon N channel MOS type. The device is designed for high speed, high current switching applications and DC-DC converter, relay drive and motor drive applications. There are some features as follows: (1)low drain-source ON resistance: RDS(ON)=0.29 (typ); (2)high forward transfer admittance: |Yfs|=3.0 S (typ); (3)low leakage current: IDSS=100A (max) (VDS=16 V); (4)enhancement-mode: Vth=0.5 to 1.1 V (VDS=10 V, ID=200A).

What comes next is the maximum ratings of 2SK2549 (Ta=25): (1)drain-source voltage, VDSS: 16 V; (2)drain-gate voltage (RGS=20 k), VDGR: 16 V; (3)gate-source voltage, VGSS: ±8 V; (4)drain current, ID: 2 A when DC and 6 A when pulse; (5)drain power dissipation, PD: 0.5 W at Ta=25 and 1.5 W when mounted on ceramic substrate; (6)channel temperature, Tch: 150; (7)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SK2549 (Ta=25): (1)gate leakage current, IGSS: ±10A at VGS=±6.5 V, VDS=0 V; (2)drain cut-off current, IDSS: 100A max at VDS=16 V, VGS=0 V; (3)drain-source breakdown voltage, V(BR)DSS: 16 V min at ID=10 mA, VGS=0 V; (4)gate threshold voltage, Vth: 0.5 V min and 1.1 V max at VDS=10 V, ID=200A; (5)drain-source ON resistance, RDS(ON): 0.29 typ and 0.38 max at ID=0.5 A, VGS=2.5 V; 0.22 typ and 0.29 max at ID=1 A, VGS=4 V; (6)forward transfer admittance, |Yfs|: 1.5 S min and 3.0 S typ at VDS=10 V, ID=1 A; (7)input capacitance, Ciss: 260 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 34 pF typ at VDS=10 V, VGS=0 V, f=1 MHz; (9)output capacitance, Coss: 103 pF typ at VDS=10 V, VGS=0 V, f=1 MHz.