2SK2685

      The 2SK2685 is designed as silicon N channel MOSFET with typical applications of UHF low noise amplifier applications.
      2SK2685 has four features.The first one is that it would have low on-resistance.The second one is that it would have high speed switching.The third one is that it would have excellent low noise characteristics which means Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz).The second one is that it would have high associated gain which means Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz).The third one that it would have high voltage which means Vds= 6 or more voltage.The last one is that it would have small package which means CMPAK-4.That are all the features.
      Some absolute maximum ratings of 2SK2685 (Ta = 25°C) have been concluded into several points as follow.The first one is about its drain to source voltage which would be 6 V.The second one is about its gate to source voltage which would be -6 V.The third one is about its drain current which would be 20 mA.The fourth onr is about its gate to drain voltage which would be -7 A.The fifth one is about its channel power dissipation which would be 100 mW.The sixth one is about its channel temperature which would be 125 °C.The last one is about its storage temperature which would be from 55 to +125 °C.Also there are some important electrical characteristics at Ta = 25°C about 2SK2685.For example its drain to source leak current would be max -20 A with condition of Vgs= 6 V, Vds= 0.And its gate to source cutoff voltage would be min 0.3 and max 2.0 V with condition of Vds= 3 V, Id= 100 mA.And also its drain current would be min 35 and typ 50 and max 70 mA with condition of Vds= 3 V, Vgs= 0(Pulse Test).And its forward transfer admittance would be min 40 and typ 60 mS with condition of Vds= 3 V, Id= 10 mA and f = 1 kHz.And its associated gain would be typ 17.0 dB with condition of Vds= 3 V, Id= 10 mA and f = 2 GHz and would be typ 15.2 dB with condition of Vds= 3 V, Id= 3 mA and f = 2 GHz and would be min 16, typ 21.4 dB with condition of Vds= 3 V, Id= 10 mA and f = 900 MHz and would be typ 19.7 dB with condition of Vds= 3 V, Id= 3 mA and f = 900 MHz.And so on.For more information please contact us.
      Notes about it.This device is very sensitive to electro static discharge.It is recommended to adopt appropriate cautions when handling this transistor.