MOSFET N-CH 900V 3A TO-3PN
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
Series: | - | Manufacturer: | Toshiba | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 900V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 3A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 4.3 Ohm @ 1.5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 1mA | Gate Charge (Qg) @ Vgs: | 25nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 750pF @ 25V | ||
Power - Max: | 125W | Mounting Type: | Through Hole | ||
Package / Case: | TO-3P-3, SC-65-3 | Supplier Device Package: | TO-3P(N) |
The 2SK2719 is designed as silicon N-channel MOS type (-MOSIII) with typical applications of chopper regulator, DC-DC converter and motor drive applications.
2SK2719 has four features.The first one is that it would have low drain-source ON-resistance which means Rds (ON) = 3.7 (typ.).The second one is that it would have high forward transfer admittance which means |Yfs| = 2.6 S (typ.).The third one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 720 V).The fourth one is that it would have enhancement mode which means Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).That are all the features.
Some absolute maximum ratings of 2SK2719 (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 900 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 900 V.The third one is about its gate-source voltage which would be ±30 V.The fourth one is about its drain current which would be 3 A for DC and would be 9 A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 125 W.The sixth one is about its single pulse avalanche energy which would be 295 mJ.The seventh one is about its avalanche current which would be 3 A.The eighth one is about its repetitive avalanche energy which would be 12.5 mJ.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.
Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause 2SK2719 to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings.And also about its drain current it should be noted that ensure that the channel temperature does not exceed 150°C.And about its single-pulse avalanche energy it should be noted that Vdd = 25 V,Tch = 25°C(initail), L = 58 H, Rg = 25 , Iar = 45 A.About its repetitive avalanche energy it should be noted that repetitive rating: pulse width limited by maximum channel temperature.After all this transistor is an electrostatic-sensitive device.Please handle with caution.
Technical/Catalog Information | 2SK2719 |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Rds On (Max) @ Id, Vgs | 4.3 Ohm @ 1.5A, 10V |
Input Capacitance (Ciss) @ Vds | 750pF @ 25V |
Power - Max | 125W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Package / Case | 2-16C1B (TO-247 N) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2SK2719 2SK2719 |