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SeekIC No. : 00164298 Detail

2SK2782(TE16L1,Q): MOSFET MOSFET N-Ch 60V 20A Rdson 0.055 Ohm

2SK2782(TE16L1,Q) Data Sheet

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Part Number:: 2SK2782(TE16L1,Q)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2025/12/22

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	0.055 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	DP

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.055 Ohms
Package / Case : DP

Parameters:

Technical/Catalog Information	2SK2782(TE16L1,Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	55 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	880pF @ 10V
Power - Max	40W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	*
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2782 TE16L1,Q 2SK2782TE16L1,Q

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2SK2782(TE16L1,Q)

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