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- Table of contents:
2SK2922
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Suppliers
DataSheet
General Description
2SK2922 Maximum Ratings
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 10 | V |
| Gate to source voltage | VGSS | ±6 | V |
| Drain current | ID | 0.7 | A |
| Drain peak current | ID(pulse)Note1 | 1.4 | A |
| Channel dissipation | PchNote2 | 3 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 45 to +150 |
2. Value at Tc = 25
2SK2922 Features
· High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, hD = 57 %min. (f = 836.5MHz)
· Compact package capable of surface mounting
· Compact package capable of surface mounting
2sk2922
PDF/DataSheet Download
- Datasheet: 2sk2922
- File Size: 77212 KB
- Manufacturer: hitachi
- Click here to Download
- ·2SK0065
- PANASONIC [Panasonic Semiconductor]
- For Impedance Conversion In Low Frequency
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- ·2SK0123
- PANASONIC [Panasonic Semiconductor]
- For Impedance Conversion In Low Frequency
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- ·2SK0198
- PANASONIC [Panasonic Semiconductor]
- For Low-Frequency Amplification
- 51075 KB
- ·2SK0301
- PANASONIC [Panasonic Semiconductor]
- Silicon N-Channel Junction FET
- 75959 KB
- ·2SK0601
- PANASONIC [Panasonic Semiconductor]
- Silicon N-Channel MOS FET
- 35848 KB
- ·2SK0614
- PANASONIC [Panasonic Semiconductor]
- For switching
- 75927 KB
- ·2SK0615
- PANASONIC [Panasonic Semiconductor]
- SILICON N-CHANNEL MOS FET
- 86887 KB
- ·2SK0620
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