2SK2968

MOSFET N-CH 900V 10A TO-3PN

product image

2SK2968 Picture
SeekIC No. : 003434082 Detail

2SK2968: MOSFET N-CH 900V 10A TO-3PN

floor Price/Ceiling Price

Part Number:
2SK2968
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/28

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 900V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 10A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 70nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2150pF @ 25V
Power - Max: 150W Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) @ Vds: 2150pF @ 25V
Power - Max: 150W
Drain to Source Voltage (Vdss): 900V
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 4A, 10V


Features:






Specifications






Description

      The 2SK2968 has a DC−DC converter, and it relay drive and motor drive. The followings are the applications of the 2SK2968. The 2SK2968 has four applications. The first is low drain−source on resistance. The second is high forward transfer admittance. The third is low leakage current. The fourth is enhancement mode. According to the above descriptions, you absolutely know that the 2SK2968 is useful.
      The 2SK2968 has many absolute maximum ratings. Here show you six absolute maximum ratings of the 2SK2968. It can make you clear of the 2SK2968. The first absolute maximum rating is the gate-source voltage which is ±30 V, and its symbol is VGSS. The second absolute maximum rating is drain current, which is 10A, and its symbol is ID. The third absolute maximum rating is drain power dissipation, which is 150W, and its symbol is PD. The fourth absolute maximum rating is channel temperature, which is 150 °C, and its symbol is Tch. The fifth absolute maximum rating is storage temperature range, which range from −55 to 150 °C, and its symbol is Tstg. The last absolute maximum rating is drain-source voltage which is 900V, and the symbol is VDSS.
      The following is the notes for the 2SK2968. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
      You should also know that there are some restrictions on product use. Here show them to you. The first is that the information contained herein is subject to change without notice. The second is that TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.




Parameters:

Technical/Catalog Information2SK2968
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs1.25 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 2150pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs70nC @ 10V
Package / Case2-16C1B (TO-247 N)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2SK2968
2SK2968



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Hardware, Fasteners, Accessories
Cables, Wires - Management
Inductors, Coils, Chokes
Resistors
Line Protection, Backups
LED Products
View more