2SK3048

MOSFET N-CH 600V 3A TO-220D

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SeekIC No. : 003431480 Detail

2SK3048: MOSFET N-CH 600V 3A TO-220D

floor Price/Ceiling Price

US $ .51~1.09 / Piece | Get Latest Price
Part Number:
2SK3048
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
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  • 25~100
  • 100~250
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  • 1000~2500
  • Unit Price
  • $1.09
  • $.88
  • $.79
  • $.7
  • $.62
  • $.51
  • $.51
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 2.1 A Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 750pF @ 20V
Power - Max: 35W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220D-A1    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 3A
Drain to Source Voltage (Vdss): 600V
Mounting Type: Through Hole
Packaging: Bulk
Power - Max: 35W
Package / Case: TO-220-3 Full Pack
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220D-A1
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds: 750pF @ 20V


Features:

·Avalanche energy capacity guaranteed
·High-speed switching
·Low ON-resistance
·No secondary breakdown



Application

·Contactless relay
·Diving circuit for a solenoid
·Driving circuit for a motor
·Control equipment
·Switching power supply



Specifications

Parameter Symbol Ratings Unit
Drain to Source breakdown voltage VDSS 600 V
Gate to Source voltage VGSS ±30 V
Drain current DC ID ±3 A
Pulse IDP ±6 A
Avalanche energy capacity EAS* 22.5 mJ
Allowable power TC = 25°C PD 35 W
Ta = 25°C 2
Channel temperature Tch 150 °C
Storage temperature Tstg -55 to +150 °C
* L = 5mH, IL = 3A, 1 pulse


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