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2SK3067

Application`Low drain−source ON resistance : RDS (ON) = 4.2 (typ.)`High forward transfer admittance : |Yfs| = 1.7 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)`Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol ...

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2SK3067: Application`Low drain−source ON resistance : RDS (ON) = 4.2 (typ.)`High forward transfer admittance : |Yfs| = 1.7 S (typ.)`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)`Enhancement&#...

2SK3067 Data Sheet

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Part Number:
2SK3067
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

`Low drain−source ON resistance : RDS (ON) = 4.2 (typ.)
`High forward transfer admittance : |Yfs| = 1.7 S (typ.)
`Low leakage current : IDSS = 100 A (max) (VDS = 600 V)
`Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
600
V
Drain−gate voltage (RGS = 20 k)
VDGR
600
V
Gate−source voltage
VGSS
±30
V
Drain current DC (Note 1)
ID
2
A
Pulse (t = 1 ms)
(Note 1)
IDP
5
A
Pulse (t = 100 s)
(Note 1)
IDP
8
A
Drain power dissipation
PD
25
W
Single pulse avalanche energy
(Note 2)
EAS
93
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
2.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 41 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.




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