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2SK3070(S)

Features: ` Low on-resistance RDS(on) = 4.5 m typ.` Low drive current` 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 40 V Gate to source voltage VGSS ±20 V Drain current ID 75 A Drain peak curren...

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SeekIC No. : 004226522 Detail

2SK3070(S): Features: ` Low on-resistance RDS(on) = 4.5 m typ.` Low drive current` 4 V gate drive device can be driven from 5 V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage ...

2SK3070(S) Data Sheet

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Part Number:
2SK3070(S)
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Low on-resistance RDS(on) = 4.5 m typ.
`  Low drive current
`  4 V gate drive device can be driven from 5 V source


Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 40 V
Gate to source voltage VGSS ±20
 V
Drain current ID 75 A
Drain peak current ID(pulse)Note1 300 A
Body-drain diode reverse drain current IDR 75 A
Avalanche current IAPNote 3
 50 A
Avalanche energy EARNote 3
 333 mJ
Channel dissipation PchNote2 100 W
Channel temperature Tch 150
Storage temperature Tstg 55 to +150
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25
3. Value at Tch = 25, Rg 50


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