2SK30ATM

The 2SK30ATM is a kind of field effect transistor. It is silicon N channel junction type. The device is designed for low noise pre-amplifier, tone control amplifier and DC-AC high input impedance amplifier circuit applications. There are some features as follows: (1)high breakdown voltage: VGDS=-50 V; (2)high input impedance: IGSS=-1 nA (Max) (VGS=-30 V); (3)low noise: NF=0.5 dB (typ) (VDS=15 V, VGS=0, RG=100 k, f=120 Hz).

What comes next is the maximum ratings of 2SK30ATM (Ta=25): (1)gate-drain voltage, VGDS: -50 V; (2)gate current, IG: 10 mA; (3)drain power dissipation, PD: 100 mW; (4)junction temperature, Tj: 125; (5)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SK30ATM (Ta=25): (1)gate cut-off current, IGSS: -1.0 nA max at VGS=-30 V, VDS=0 V; (2)drain current, IDSS: 0.3 mA min and 6.5 mA max at VDS=10 V, VGS=0 V; (3)gate-drain breakdown voltage, V(BR)GDS: -50 V min at IG=-100A, VDS=0 V; (4)gate-source cut-off voltage, VGS(OFF): -0.4 V min and -5.0 V max at VDS=10 V, ID=0.1A; (6)forward transfer admittance, |Yfs|: 1.2 mS min at VDS=10 V, VGS=0, f=1 kHz; (7)input capacitance, Ciss: 8.2 pF typ at VDS=0 V, VGS=0 V, f=1 MHz; (8)reverse transfer capacitance, Crss: 2.6 pF typ at VGD=-10 V, VGS=0 V, f=1 MHz; (9)noise figure, NF: 0.5 dB typ and 5.0 dB max at VDS=15 V, VGS=0, RG=100 k, f=120 Hz.