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2SK3127(TE24L,Q): MOSFET MOSFET N-Ch 30V 45A Rdson 0.012 Ohm

2SK3127(TE24L,Q) Data Sheet

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Part Number:: 2SK3127(TE24L,Q)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2026/6/14

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	30 V	Continuous Drain Current :	45 A
Resistance Drain-Source RDS (on) :	0.012 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-220 SM
Packaging :	Reel

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : TO-220 SM

Parameters:

Technical/Catalog Information	2SK3127(TE24L,Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	12 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 10V
Power - Max	65W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	66nC @ 10V
Package / Case	TO-220FL
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK3127 TE24L,Q 2SK3127TE24L,Q

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2SK3127(TE24L,Q)

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