Features: ` Low on-resistance RDS = 65 m typ.` High speed switching` 4 V gate drive device can be driven from 5 V sourceSpecifications Item SYMBOL RATINGS UNIT Drain to source voltage VDSS 120 V Gate to source voltage VGSS ±20 V Drain current ID 1...
2SK3153: Features: ` Low on-resistance RDS = 65 m typ.` High speed switching` 4 V gate drive device can be driven from 5 V sourceSpecifications Item SYMBOL RATINGS UNIT Drain to source vo...
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| Item |
SYMBOL |
RATINGS |
UNIT |
| Drain to source voltage |
VDSS |
120 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
15 |
A |
| Drain peak current |
I D(pulse)Note 1 |
60 |
A |
| Body-drain diode reverse drain current |
IDR |
15 |
A |
| Avalanche current |
IAPNote 3 |
15 |
A |
| Avalanche energy |
EARNote 3 |
19 |
mJ |
| Channel dissipation |
Pch Note 2 |
30 |
W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
55 to +150 |
°C |