2SK3176(F), US $ 1.49-2.84 , Toshiba, 2SK3176(F) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00153726 Detail

2SK3176(F): MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm

2SK3176(F) Data Sheet

US $ 1.49~2.84 / Piece | Get Latest Price

Part Number:: 2SK3176(F)
Mfg:: Toshiba
Supply Ability:: 5000

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$2.84
$2.28
$1.59
$1.49

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	30 A
Resistance Drain-Source RDS (on) :	0.052 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-3P
Packaging :	Bulk

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 200 V
Packaging : Bulk
Continuous Drain Current : 30 A
Package / Case : TO-3P
Resistance Drain-Source RDS (on) : 0.052 Ohms

Parameters:

Technical/Catalog Information	2SK3176(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	52 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	5400pF @ 10V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	125nC @ 10V
Package / Case	2-16C1B (TO-247 N)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK3176 F 2SK3176F

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2SK3176(F)

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