Features: ` Low on-resistance RDS =0.1 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 10 A Drain peak current ID...
2SK3212: Features: ` Low on-resistance RDS =0.1 typ.` High speed switching` 4V gate drive device can be driven from 5V sourceSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS ...
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| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 100 | V |
| Gate to source voltage | VGSS | ±20 |
V |
| Drain current | ID | 10 | A |
| Drain peak current | ID(pulse)Note1 | 40 | A |
| Body-drain diode reverse drain current | IDR | 10 | A |
| Avalanche current | IAPNote3 |
10 | A |
| Avalanche energy | EARNote3 |
10 | mJ |
| Channel dissipation | PchNote2 | 20 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 55 to +150 |