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2SK3499

ApplicationLow drain-source ON resistance: RDS (ON) = 0.4 (typ.)High forward transfer admittance: |Yfs| = 8.0 S (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 400 V)Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Rating Unit Drai...

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SeekIC No. : 004226725 Detail

2SK3499: ApplicationLow drain-source ON resistance: RDS (ON) = 0.4 (typ.)High forward transfer admittance: |Yfs| = 8.0 S (typ.)Low leakage current: IDSS = 100 A (max) (VDS = 400 V)Enhancement-model: Vth = 2...

2SK3499 Data Sheet

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Part Number:
2SK3499
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Description



Application

Low drain-source ON resistance: RDS (ON) = 0.4 (typ.)
High forward transfer admittance: |Yfs| = 8.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 400 V)
Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)




Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS 400 V
Drain-gate voltage (RGS = 20 k) VDGR 400 V
Gate-source voltage VGSS ±30 V
Drain current DC (Note 1) ID 10 A
Pulse (Note 1) IDP 40
Drain power dissipation (Tc = 25) PD 80 W

Single pulse avalanche energy (Note 2)

 EAS 360 mJ
Avalanche current IAR 10 A
Repetitive avalanche energy (Note 3) EAR 8 mJ
Channel temperature Tch 150
Storage temperature range Tstg -55 to150



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