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2SK3562(Q)

MOSFET N-Ch 600V 6A Rdson 1.25 Ohm

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SeekIC No. : 00164071 Detail

2SK3562(Q): MOSFET N-Ch 600V 6A Rdson 1.25 Ohm

2SK3562(Q) Data Sheet

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Part Number:
2SK3562(Q)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : 30 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 1.25 Ohms Configuration : Single
Mounting Style : SMD/SMT Package / Case : TO-220 SIS
Packaging : Bulk    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Continuous Drain Current : 6 A
Gate-Source Breakdown Voltage : 30 V
Packaging : Bulk
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 1.25 Ohms
Package / Case : TO-220 SIS


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