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SeekIC No. : 003434035 Detail

2SK3568(Q,M): MOSFET N-CH 500V 12A TO-220SIS

2SK3568(Q,M) Data Sheet

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Part Number:: 2SK3568(Q,M)
Mfg:
Supply Ability:: 5000

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Upload time: 2024/4/27

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Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	500V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	12A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	520 mOhm @ 6A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 1mA	Gate Charge (Qg) @ Vgs:	42nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1500pF @ 25V
Power - Max:	40W	Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack	Supplier Device Package:	TO-220SIS

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 500V
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 40W
Package / Case: TO-220-3 Full Pack
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 1500pF @ 25V
Manufacturer: Toshiba
Supplier Device Package: TO-220SIS
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V

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2SK3568(Q,M)

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