2SK3708

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 30A
Vgs(th) (Max) @ Id: -
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 4200pF @ 20V
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: ON Semiconductor
Gate Charge (Qg) @ Vgs: 73nC @ 10V
Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V
Supplier Device Package: TO-220ML


Features:

• Low ON-resistance.
• 4V drive.
• Motor driver, DC / DC converter.
• Avalanche resistance guarantee






Pinout






Specifications

Absolute maximum ratings
VDSS [V]	100
VGSS [V]	20
ID [A]	30
PD [W]	30 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=15	0.025
RDS(on) typ [] VGS=4V ID [A]=15	0.03
VGS(off) min [V]	1.2
VGS(off) max [V]	2.6
|yfs| typ [S]	28
Ciss typ [pF]	4200
Qg typ [nC]	73

Parameter	Symbol	Conditions	Ratings	Unit
in-to-Source Voltage	VDSS		100	V
Gate-to-Source Voltage	VGSS		±20	V
Drain Current (DC)	ID		30	A
Drain Current (Pulse)	IDP	PW10ms, duty cycle1%	120	A
Allowable Power Dissipation	PD		2.0	W
		Tc=25	30	W
Channel Temperature	Tch		150
orage Temperature	Tstg		-55 to +150
nche Enargy (Single Pulse) *1	EAS		281	mJ
Avalanche Current *2	IAV		30	A

*1 V_DD=20V, L=500mH, I_AV=30A
*2 L500mH, single pulse