2SK3798

Features: Application• Low drain-source ON resistance: RDS (ON) = 2.5 (typ.)• High forward transfer admittance: |Yfs| = 2.8 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 720 V)• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics ...

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2SK3798 Picture
SeekIC No. : 004226890 Detail

2SK3798: Features: Application• Low drain-source ON resistance: RDS (ON) = 2.5 (typ.)• High forward transfer admittance: |Yfs| = 2.8 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 720 V...

floor Price/Ceiling Price

Part Number:
2SK3798
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/9

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Product Details

Description



Features:






Application

• Low drain-source ON resistance: RDS (ON) = 2.5 (typ.)
• High forward transfer admittance: |Yfs| = 2.8 S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 720 V)
• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS=20k)
VDGR
900
V
Gate?source voltage
VGSS
±30
V
Drain current DC                (Note1)
ID
4
A
Pulse (t = 1 ms)
                     (Note1)
IDP
12
Drain power dissipation (Tc=25)
PD
40
W
Single pulse avalanche energy
                                                 (Note 2)
EAS
345
mJ
Avalanche current
IAR
4
A
Repetitive avalanche energy (Note 3)
EAR
4.0
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 ~ +150
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Description






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