MOSFET POWER MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 14 A | ||
| Resistance Drain-Source RDS (on) : | 0.47 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220FL | Packaging : | Bulk |

| Absolute maximum ratings | |
|---|---|
| VDSS [V] | 600 |
| VGSS [V] | 30 |
| ID [A] | 14 |
| PD [W] | 40
Tc=25°C |
| Electrical characteristics | |
|---|---|
| RDS(on) typ [] VGS=10V ID [A]=7 |
0.47 |
| VGS(off) min [V] | 3 |
| VGS(off) max [V] | 5 |
| |yfs| typ [S] | 8 |
| Ciss typ [pF] | 1200 |
| Qg typ [nC] | 46 |
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Drain-to-Source Voltage |
VDSS |
600 |
V | |
| Gate-to-Source Voltage |
VGSS |
±30 |
V | |
| Drain Current (DC) |
IDc*1 |
Limited only by maximum temperature |
14 |
A |
|
IDpack*2 |
SANYO's ideal heat dissipation condition |
9.2 |
A | |
| Drainpeak Current(Pulse) |
IDP |
PW10s, duty cycle1% |
52 |
A |
| Allowable Power Dissipation |
PD |
2.0 |
W | |
| Tc=25(SANYO's ideal heat dissipation condition) |
40 |
W | ||
| Channel Temperature |
Tch |
150 |
||
| Storage Temperature |
Tstg |
-55 to +150 |
||
| Avalanche Energy (Single Pulse) *3 |
EAS |
117 |
mJ | |
| Avalanche Current *4 |
IAV |
14 |
A |