2SK4099LS

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Bulk


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.





Pinout






Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		600	V
Gate-to-Source Voltage	VGSS		±30	V
Drain Current (DC)	IDc*1	Limited only by maximum temperature	8.5	A
	IDpack*2	SANYO's ideal heat dissipation condition	6.9	A
Drainpeak Current(Pulse)	IDP	PW10s, duty cycle1%	34	A
Allowable Power Dissipation	PD		2.0	W
		Tc=25 (SANYO's ideal heat dissipation condition)	35	W
Channel Temperature	Tch		150
Storage Temperature	Tstg		-55 to +150
Avalanche Energy (Single Pulse) *3	EAS		215	mJ
Avalanche Current *4	IAV		8.5	A

*1 Shows chip capability
*2 Package limited
*3 V_DD=99V, L=5mH, I_AV=8.5A
*4 L5mH, single pulse
Marking : K4099

Absolute maximum ratings
VDSS [V]	600
VGSS [V]	30
ID [A]	8.5
PD [W]	35 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=4	0.72
VGS(off) min [V]	3
VGS(off) max [V]	5
|yfs| typ [S]	5.4
Ciss typ [pF]	750
Qg typ [nC]	29