2SK4126

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 550 mOhms
Packaging : Tray
Package / Case : TO-3PB


Features:

• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Avalanche resistance guarantee.




Pinout






Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		650	V
Gate-to-Source Voltage	VGSS		±30	V
Drain Current (DC)	ID		15	mA
Drain Current (Pulse)	IDP	PW10s, duty cycle1%	48	A
Allowable Power Dissipation	PD		2.5	W
		Tc=25 (SANYO's ideal heat dissipation condition)	170	W
Channel Temperature	Tch		150
Storage Temperature	Tstg		-55 to +150
Avalanche Energy (Single Pulse) *1	EAS		132	mJ
Avalanche Current *2	IAV		15	A

*1 V_DD=99V, L=1mH, I_AV=15A
*2 L1mH, single pulse
Marking : K4126

Absolute maximum ratings
VDSS [V]	650
VGSS [V]	30
ID [A]	15
PD [W]	170 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=6	0.55
VGS(off) min [V]	3
VGS(off) max [V]	5
|yfs| typ [S]	8.2
Ciss typ [pF]	1200
Qg typ [nC]	45.4