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2SK4143

Features: • Low on-state resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A)• Low input capacitance Ciss = 820 pF TYP.• Built-in gate protection diodeSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS 60 VGate to Source Vol...

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SeekIC No. : 004227051 Detail

2SK4143: Features: • Low on-state resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A)• Low input capacitance Ciss = 820 pF TYP.• Built-in g...

2SK4143 Data Sheet

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Part Number:
2SK4143
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• Low on-state resistance
   RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)
   RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A)
• Low input capacitance
   Ciss = 820 pF TYP.
• Built-in gate protection diode


Specifications

Drain to Source Voltage (VGS = 0 V)              VDSS              60                    V
Gate to Source Voltage (VDS = 0 V)               VGSS            ±20                   V
Drain Current (DC) (TC = 25)                       ID(DC)          ±20                  A
Drain Current (pulse) Note1                           ID(pulse)        ±50                  A
Total Power Dissipation (TC = 25)               PT1                20                   W
Total Power Dissipation (TA = 25)               PT2                2.0                   W
Channel Temperature                                    Tch                 150                  
Storage Temperature                                     Tstg                −55 to +150    
Single Avalanche Current Note2                      IAS                 15                    A
Single Avalanche Energy Note2                       EAS                 22.5                mJ

Notes 1. PW 10 s, Duty Cycle 1%
          2. Tch 150, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H


Description

The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications.


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