2STF1340

Transistors Bipolar (BJT) LoVltg FastSwtch npn Pwr bipolar trans

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2STF1340 Picture
SeekIC No. : 00205602 Detail

2STF1340: Transistors Bipolar (BJT) LoVltg FastSwtch npn Pwr bipolar trans

floor Price/Ceiling Price

US $ .09~.21 / Piece | Get Latest Price
Part Number:
2STF1340
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.21
  • $.1
  • $.09
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 280 at 0.1 A at 2 V Configuration : Single Dual Collector
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-89
Packaging : Reel    

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-89
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 100 MHz
Collector- Emitter Voltage VCEO Max : 40 V
Configuration : Single Dual Collector
DC Collector/Base Gain hfe Min : 280 at 0.1 A at 2 V


Features:

· Very low collector-emitter saturation voltage
· High current gain characteristic
· Fast switching speed
· Miniature SOT-89 plastic package for surface mounting circuits
· In compliance with the 2002/93/EC European Directive



Application

· LED
· Motherboard & hard disk drive
· Mobile equipment
· Battery charger
· Voltage regulation



Specifications

SYMBOL PARAMETER VALUE UNIT
VCES Collector-emitter voltage (VCE = 0) 40 V
VCEO Collector-emitter voltage (IB = 0) 40 V
VEBO Emitter-base voltage(IC = 0) 5 V
IC Collector current 3 A
ICM Collector peak current (tP < 5ms) 6 a
Ptot Total dissipation at Tamb = 25 1.4 W
Tstg Storage temperature -65 to 150
TJ Max. operating junction temperature 150



Description

The 2STF1340 in a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary PNP is the 2STF2340.




Parameters:

Technical/Catalog Information2STF1340
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)3A
Power - Max1.4W
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 150mA, 3A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-89-3, TO-243-3
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2STF1340
2STF1340
497 7060 6 ND
49770606ND
497-7060-6



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