Transistors Bipolar (BJT) PWR BIP/S.SIGNAL
2STF2340: Transistors Bipolar (BJT) PWR BIP/S.SIGNAL
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 3 A |
| DC Collector/Base Gain hfe Min : | 280 at 0.1 A at 2 V | Configuration : | Single Dual Collector |
| Maximum Operating Frequency : | 100 MHz (Min) | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | SMD/SMT | Package / Case : | SOT-89 |
| Packaging : | Reel |
| SYMBOL | PARAMETER | VALUE | UNIT |
| VCBO | Collector-base voltage (IE = 0) | -40 | V |
| VCEO | Collector-emitter voltage (IB = 0) | -40 | V |
| VEBO | Emitter-base voltage (IC = 0) |
-5 |
V |
| IC | Collector current | -3 | A |
| ICM | Collector peak current (tP < 5ms) | -6 | A |
| PTOT | Total dissipation at Tc = 25 | 1.4 | W |
| Tstg | Storage temperature | -65 to 150 | |
| TJ | Max. operating junction temperature | 150 |
The 2STF2340 in a PNP transistor manufactured using new "PB-HDC" (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STF1340.
| Technical/Catalog Information | 2STF2340 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 3A |
| Power - Max | 1.4W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 3A, 2V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 150mA, 3A |
| Frequency - Transition | 100MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-89-3, TO-243-3 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2STF2340 2STF2340 497 7061 2 ND 49770612ND 497-7061-2 |