2STF2340

Transistors Bipolar (BJT) PWR BIP/S.SIGNAL

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2STF2340 Picture
SeekIC No. : 00204645 Detail

2STF2340: Transistors Bipolar (BJT) PWR BIP/S.SIGNAL

floor Price/Ceiling Price

US $ .15~.23 / Piece | Get Latest Price
Part Number:
2STF2340
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.23
  • $.2
  • $.18
  • $.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 280 at 0.1 A at 2 V Configuration : Single Dual Collector
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-89
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Package / Case : SOT-89
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 100 MHz (Min)
Collector- Emitter Voltage VCEO Max : 40 V
Configuration : Single Dual Collector
DC Collector/Base Gain hfe Min : 280 at 0.1 A at 2 V


Features:

Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
SOT-89 plastic package for surface mounting circuits



Application

LED
Motherboard & hard disk drive
Mobile equipment
Battery charger
Voltage regulation



Specifications

SYMBOL PARAMETER VALUE UNIT
VCBO Collector-base voltage (IE = 0) -40 V
VCEO Collector-emitter voltage (IB = 0) -40 V
VEBO Emitter-base voltage (IC = 0)

-5

V
IC Collector current -3 A
ICM Collector peak current (tP < 5ms) -6 A
PTOT Total dissipation at Tc = 25 1.4 W
Tstg Storage temperature -65 to 150
TJ Max. operating junction temperature 150



Description

The 2STF2340 in a PNP transistor manufactured using new "PB-HDC" (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STF1340.




Parameters:

Technical/Catalog Information2STF2340
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)3A
Power - Max1.4W
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 3A, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 150mA, 3A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-89-3, TO-243-3
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2STF2340
2STF2340
497 7061 2 ND
49770612ND
497-7061-2



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