2STF1550

Transistors Bipolar (BJT) LO VLT HI PRM PW TRN

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2STF1550 Picture
SeekIC No. : 00205519 Detail

2STF1550: Transistors Bipolar (BJT) LO VLT HI PRM PW TRN

floor Price/Ceiling Price

US $ .12~.17 / Piece | Get Latest Price
Part Number:
2STF1550
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.17
  • $.14
  • $.13
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/7

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 5 A
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-89
Packaging : Reel    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Package / Case : SOT-89
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 5 A


Features:

·Very low collector-emitter saturation voltage 
·High current gain characteristic
·Fast switching speed
·Surface mounting devices in medium powerSOT-89 and SOT-223 packages
·In compliance with the 2002/93/EC European Directive




Application

·Emergency lighting
·LED
·Motherboard & Hard
·Disk drive
·Mobile equipment Battery charger
· Voltage regulation



Specifications

Symbo

Parameter

Value

Unit

2STF1550

2STN1550

SOT-89

SOT-223

VCES

Collector-emitter voltage (VCE = 0)

50

V

VCEO

Collector-emitter voltage (IB = 0)

50

V

VEBO

Emitter-base voltage (IC = 0)

5

V

IC

Collector current

5

A

ICM

Collector peak current (tP < 5ms)

10

A

IB

Base current

1

A

Ptot

Total dissipation at Tamb = 25

1.4

1.6

W

Tstg

Storage temperature

-65 to 150

TJ

Max. operating junction temperature

150




Description

The 2STF1550 and 2STN1550 are NPN transistors manufactured using new "PB-HCD"(Power Bipolar ighurrentDensity) technology.

The resulting transistor shows exceptional high gain performances  coupled with very low saturation voltage.




Parameters:

Technical/Catalog Information2STF1550
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)5A
Power - Max1.4W
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic450mV @ 300mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-62, SOT-89, MPT3 (3 leads + Tab)
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2STF1550
2STF1550
497 9057 2 ND
49790572ND
497-9057-2



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