2STW4466

Mounting Style :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 50
Package / Case : TO-247
Maximum Operating Frequency : 20 MHz


Features:

High breakdown voltage VCEO = 80 V
Complementary to 2STW1693
Typical ft = 20 MHz
Fully characterized at 125 oC


Application

Audio power amplifier


Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-base voltage (IE = 0)	100	V
VCEO	Collector-emitter voltage (IB = 0)	80	V
VEBO	Emitter-base voltage (IC = 0)	6	V
IC	Collector current	6	A
ICM	Collector peak current (tP < 5 ms)	12	A
PTOT	Total dissipation at Tc = 25 °C	60	W
Tstg	Storage temperature	-65 to 150	°C
TJ	Max. operating junction temperature	150	°C

Description

The 2STW4466 is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low V_CE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage.

Parameters:

Technical/Catalog Information	2STW4466
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	6A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 2A, 4V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 600mA, 6A
Frequency - Transition	20MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STW4466 2STW4466 497 7065 5 ND 49770655ND 497-7065-5