Transistors Bipolar (BJT) LOW VOLTAGE FAST SWITCHING NPN POWER
2STX1360: Transistors Bipolar (BJT) LOW VOLTAGE FAST SWITCHING NPN POWER
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
| Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 3 A |
| DC Collector/Base Gain hfe Min : | 80 at 100 mA at 2 V | Configuration : | Single |
| Maximum Operating Frequency : | 130 MHz (Typ) | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-92-3 |
| Packaging : | Bulk |
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-base voltage (IE = 0) |
80 |
V |
|
VCEO |
Collector-emitter voltage(IB = 0) |
60 |
V |
|
VEBO |
Emitter-base voltage (IC = 0) |
6 |
V |
|
IC |
Collector current |
30 |
A |
|
ICM |
Collector current-Peak (tP < 5ms) |
5 |
A |
|
IB |
Base current (DC) |
0.2 |
A |
|
IBM |
Base Peak Current (tP < 5ms) |
0.4 |
A |
|
PTOT |
Total dissipation atTC=25 |
1 |
W |
|
Tj |
Junction temperature |
150 |
|
|
Tstg |
Storage temperature |
-65~150 |
The 2STX1360 is a NPN transistor manufactured using new "PB-HDC" (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
| Technical/Catalog Information | 2STX1360 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 3A |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 3A |
| Frequency - Transition | 130MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3 (Straight Leads) |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2STX1360 2STX1360 497 5213 ND 4975213ND 497-5213 |