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30PT100

Features: • 175 °C high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Increased ruggedness for reverse avalanche capability• RBSOA available• Negligible switchin...

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SeekIC No. : 004227572 Detail

30PT100: Features: • 175 °C high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Inc...

30PT100 Data Sheet

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Part Number:
30PT100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level




Application

• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems




Specifications

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) 50 % duty cycle at TC = 156 °C, rectangular waveform 30 A
Maximum peak one cycle A
non-repetitive surge current		 IFSM 5 s sine or 3 s rect. p Following any rated load
condition and with rated
VRRM applied		 2200 A
10 ms sine or 6 ms rect. pulse 150
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3 A, L = 30 mH 135 mJ
Repetitive avalanche current IAR Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8 IAS at
TJ max.		 A





Description

30PT100 High Performance Schottky Generation 5.0, 30 A




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