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311LP3E

Features: P1dB Output Power: +15.5 dBmOutput IP3: +32 dBmGain: 14.5 dB50 Ohm I/O's16 Lead 3x3mm SMT Package: 9mm2ApplicationThe HMC311LP3 / HMC311LP3E is an ideal RF/IF gain block or LO buffer amplifi er for:• Cellular / PCS / 3G• Fixed Wireless & WLAN• CATV & Cable Modem...

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SeekIC No. : 004227881 Detail

311LP3E: Features: P1dB Output Power: +15.5 dBmOutput IP3: +32 dBmGain: 14.5 dB50 Ohm I/O's16 Lead 3x3mm SMT Package: 9mm2ApplicationThe HMC311LP3 / HMC311LP3E is an ideal RF/IF gain block or LO buffer ampli...

311LP3E Data Sheet

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Part Number:
311LP3E
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

P1dB Output Power: +15.5 dBm
Output IP3: +32 dBm
Gain: 14.5 dB
50 Ohm I/O's
16 Lead 3x3mm SMT Package: 9mm2



Application

The HMC311LP3 / HMC311LP3E is an ideal RF/IF gain block or LO buffer amplifi er for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio


Pinout

Connection Diagram


Specifications

Collector Bias Voltage (Vcc)
 +7 Vdc
RF Input Power (RFIN)(Vs = +5 Vdc) +10 dBm
Junction Temperature 150
Continuous Pdiss (T = 85)
(derate 5.21 mW/ above 85)		 0.339 W
Thermal Resistance
(junction to ground paddle)		 192/W
Storage Temperature -65 to +150
Operating Temperature -40 to +85



Description

The HMC311LP3 & HMC311LP3E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifi ers. This 3x3mm QFN packaged amplifi er can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.




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