33395

Features: • Drives Six N-Channel Low RDS(ON) Power MOSFETs• Built-In Charge Pump Circuitry• Built-In Current Sense Comparator and Output Drive Current Limiting• Built-In PWM Mode Control Logic• Built-In Circuit Protection• Designed for Fractional to Integral HP ...

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33395 Picture
SeekIC No. : 004228451 Detail

33395: Features: • Drives Six N-Channel Low RDS(ON) Power MOSFETs• Built-In Charge Pump Circuitry• Built-In Current Sense Comparator and Output Drive Current Limiting• Built-In PWM ...

floor Price/Ceiling Price

Part Number:
33395
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

• Drives Six N-Channel Low RDS(ON) Power MOSFETs
• Built-In Charge Pump Circuitry
• Built-In Current Sense Comparator and Output Drive Current Limiting
• Built-In PWM Mode Control Logic
• Built-In Circuit Protection
• Designed for Fractional to Integral HP BLDC Motors
• 32-Terminal SOIC Wide Body Surface Mount Package
• 33395 Incorporates a <5.0 µs Shoot-Through Suppression Timer
• 33395T Incorporates a <1.0 µs Shoot-Through Suppression Timer



Pinout

  Connection Diagram


Specifications

Rating Symbol Value Unit
VIGN Supply Voltage VIGN -15.5 to 40
VDC
VIGNP Load Dump Survival VIGNPLD -0.3 to 65 VDC
VDD Logic Supply Voltage (Fail Safe) VDD -0.3 to 7.0 VDC
Logic Input Voltage (LSEn, HSEn, PWM, and MODEn) VIN 0.3 to 7.0 VDC
Start Up Current VIGNP IVIGNStartUp 100 mA
ESD Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
VESD1
VESD2
±500
±200
V
Storage Temperature TSTG -65 to 160
Operating Ambient Temperature TA -40 to 125
Operating Case Temperature TC -40 to 125
Maximum Junction Temperature TJ 150
Power Dissipation (TA = 25) PD 1.5 W
Terminal Soldering Temperature
TSOLDER 240
Thermal Resistance, Junction-to-Ambient RJA 65 /W



Description

The 33395 simplifies the design of high-power BLDC motor control design by combining the gate drive, charge pump, current sense, and protection circuitry necessary to drive a three-phase bridge configuration of six N-channel power MOSFETs. Mode logic is incorporated to route a pulse width modulation (PWM) signal to either the low-side MOSFETs or high-side MOSFETs of the bridge, or to provide complementary PWM outputs to both the low- and high-sides of the bridge.

Detection and drive circuitry are also incorporated to control a reverse battery protection high-side MOSFET switch. PWM frequencies up to 28 kHz are possible. Built-in protection circuitry prevents damage to the MOSFET bridge as well as the drive IC and includes overvoltage shutdown, overtemperature shutdown, overcurrent shutdown, and undervoltage shutdown.
The device is parametrically specified over an ambient temperature range of -40 TA 125 and 5.5 V VIGN 24 V supply.


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