3N60 Selling Leads, Price trend, 3N60 DataSheet download, circuit diagram from SeekIC.com

Features: * RDS(ON) = 3.6 @VGS = 10 V* Ultra low gate charge ( typical 10 nC )* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT ...

See larger image

SeekIC No. : 004230051 Detail

3N60: Features: * RDS(ON) = 3.6 @VGS = 10 V* Ultra low gate charge ( typical 10 nC )* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )* Fast switching capability* Avalanche energy specified* Imp...

3N60 Data Sheet

Get Latest Price

Part Number:: 3N60
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

* RDS(ON) = 3.6 @V_GS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( C_RSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

Specifications

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage	3N60-A	V_DSS	600	V
Drain-Source Voltage	3N60-B	V_DSS	650	V
Gate-Source Voltage		V_GSS	±30	V
Avalanche Current - (Note 1)		I_AR	3.0	A
Continuous Drain Current	T_C= 25°C	I_D	3.0	A
Continuous Drain Current	T_C = 100°C	I_D	1.9	A
Pulsed Drain Current, T_P Limited by TJMAX - (Note 1)		I_DM	12	A
Avalanche Energy, Single Pulsed (Note 2)		E_AS	200	mJ
Avalanche Energy, Repetitive, Limited by TJMAX		E_AR	7.5	mJ
Peak Diode Recovery dv/dt (Note 3)		dv/dt	4.5	V/ns
Power Dissipation		P_D	75	W
Junction Temperature		T_J	+150
Storage Temperature		T_STG	-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Description

The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This 3N60 power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

3N60

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Filters(263)

Relays(6300)

Capacitors(4587)

Batteries, Chargers, Holders(975)

Test Equipment(3237)

Optical Inspection Equipment(251)