3SK291

Application• Superior cross modulation performance• Low reverse transfer capacitance: Crss = 0.016 pF (typ.)• Low noise figure: NF = 1.5dB (typ.)Specifications Characteristics Symbol Rating Unit Drain-source voltage VDSS 12.5 V Gate 1-source voltage ...

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SeekIC No. : 004230124 Detail

3SK291: Application• Superior cross modulation performance• Low reverse transfer capacitance: Crss = 0.016 pF (typ.)• Low noise figure: NF = 1.5dB (typ.)Specifications Characteristics...

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Part Number:
3SK291
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Description



Application

• Superior cross modulation performance
• Low reverse transfer capacitance: Crss = 0.016 pF (typ.)
• Low noise figure: NF = 1.5dB (typ.)



Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
12.5
V
Gate 1-source voltage
VGSS
±8
V
Gate 2-source voltage
VG2S
±8
V
Drain current
ID
30
A
Drain power dissipation
PD
150
W
Channel temperature
Tch
125
Storage temperature range
TSTG
-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant  hange in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  onditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling  ecautions"/"Derating Concept and Methods") and ndividual reliability data (i.e. reliability test report and estimated failure rate, etc).




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