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- Table of contents:
3SK324
-
Suppliers
DataSheet
General Description
3SK324 Maximum Ratings
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
6 |
V |
| Gate1 to source voltage |
VG1S |
±6 -6 |
V |
| Gate2 to source voltage |
VG2S |
±6 -6 |
V |
| Drain current |
ID |
20 |
mA |
| Channel dissipation |
Pch2 |
250 |
mW |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |
3SK324 Features
• Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz)
• High gain characteristics; PG = 24 dB typ. (at f = 900 MHz)
• Capable low voltage operation; +B = 3.5 V
• High Endurance Voltage; VDS = 6 V
• High gain characteristics; PG = 24 dB typ. (at f = 900 MHz)
• Capable low voltage operation; +B = 3.5 V
• High Endurance Voltage; VDS = 6 V
3SK122
PDF/DataSheet Download
- Datasheet: 3SK122
- File Size: 48489 KB
- Manufacturer: NEC [NEC]
- Click here to Download
- ·3SK126
- TOSHIBA [Toshiba Semiconductor]
- N CHANNEL DUAL GATE MOS TYPE (TY TUNER, VHF RF AMPLIFIER, TV TUNER VHF MIXER APPLICATIONS)
- 234270 KB
- ·3SK127
- TOSHIBA [Toshiba Semiconductor]
- N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER, UHF MIXER APPLICATIONS)
- 227084 KB
- ·3SK131
- NEC [NEC]
- MOS FIELD EFFECT TRANSISTOR
- 65772 KB
- ·3SK134B
- NEC [NEC]
- RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
- 50114 KB
- ·3SK135A
- NEC [NEC]
- RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
- 54010 KB
- ·3SK151
- TOSHIBA [Toshiba Semiconductor]
- N CHANNEL DUAL GATE MOS TYPE (TV TYNER VHF MIXER, VHF RF AMPLIFIER APPLICATIONS)
- 238077 KB
- ·3SK153
- TOSHIBA [Toshiba Semiconductor]
- N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF, VHF WIDE BAND RF AMPLIFIER APPLICATIONS)
- 217977 KB
- ·3SK165
- SONY [Sony Corporation]
- GaAs N-channel Dual Gate MES FET
- 61149 KB
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