4218165L

Features:

• EDO (Hyper page mode)
• 1,048,576 words by 16 bits organization
• Single +3.3 V ±0.3 V power supply
• Fast access and cycle time


Pinout




Specifications

Parameter	Symbol	Condition	Rating	Unit
Voltage on any pin relative to GND	VT		0.5 to +4.6	V
Supply voltage	VCC		0.5 to +4.6	V
Output current	IO		20	mA
Power dissipation	PD		1	W
Operating ambient temperature	TA		0 to +70
Storage temperature	Tstg		55 to +125

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

Description

The mPD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.

EDO is a kind of the page mode and is useful for the read operation.

Besides, the mPD42S18165L can execute CAS before RAS self refresh.

The mPD42S18165L, 4218165L are packaged in 50-pin plastic TSOP (II) and 42-pin plastic SOJ.