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Description: SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-cou...


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4MbitSPI General Description


SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package occupying less board space and ultimately lowering total system costs. SST25LF020A/040A SPI serial flash memories are manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The SST25LF020A/040A devices significantly improve performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25LF020A/040A devices operate with a single 3.0- 3.6V power supply.

The SST25LF020A devices are offered in an 8-lead SOIC 150 mil body width (SA) package. The SST25LF040A devices are offered in an 8-lead SOIC 200 mil body width (S2A) package. All densities are offered in the 8-contact WSON package. See Figure 1 for the pin assignments.

4MbitSPI Maximum Ratings

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . .1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 mA

4MbitSPI Features

• Single 3.0-3.6V Read and Write Operations
• Serial Interface Architecture
    SPI Compatible: Mode 0 and Mode 3
• 33 MHz Max Clock Frequency
• Superior Reliability
    Endurance: 100,000 Cycles (typical)
    Greater than 100 years Data Retention
• Low Power Consumption:
    Active Read Current: 7 mA (typical)
    Standby Current: 8 µA (typical)
• Flexible Erase Capability
    Uniform 4 KByte sectors
    Uniform 32 KByte overlay blocks
• Fast Erase and Byte-Program:
    Chip-Erase Time: 70 ms (typical)
    Sector- or Block-Erase Time: 18 ms (typical)
    Byte-Program Time: 14 µs (typical)
• Auto Address Increment (AAI) Programming
    Decrease total chip programming time over Byte-Program operations
• End-of-Write Detection
    Software Status
• Hold Pin (HOLD#)
    Suspends a serial sequence to the memory without deselecting the device
• Write Protection (WP#)
    Enables/Disables the Lock-Down function of the status register
• Software Write Protection
    Write protection through Block-Protection bits in status register
• Temperature Range
    Commercial: 0°C to +70°C
    Industrial: -40°C to +85°C
    Extended: -20°C to +85°C
• Packages Available
8-lead SOIC 150 mil body width
for SST25LF020A
8-lead SOIC 200 mil body width
for SST25LF040A
8-contact WSON (5mm x 6mm)
• All non-Pb (lead-free) devices are RoHS compliant

4MbitSPI datasheet

4MBI100T-060
PDF/DataSheet Download

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