4N35-000E

Current Transfer Ratio :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Input Type : DC
Maximum Collector Emitter Voltage : 30 V
Package / Case : PDIP-6
Maximum Collector Current : 100 mA
Isolation Voltage : 3550 Vrms
Maximum Power Dissipation : 350 mW


Description

The 4N35-000E is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a photo-transistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing option and lead bend SMD option. Response time of 4N35-000E, tr, is typically 3 us and minimum CTR is 100% at input current of 10 mA.

Parameters:

Technical/Catalog Information	4N35-000E
Vendor	Avago Technologies US Inc.
Category	Isolators
Voltage - Isolation	2500Vrms
Input Type	DC
Output Type	Transistor with Base
Current - Output / Channel	2mA
Voltage - Output	30V
Vce Saturation (Max)	500mV
Current Transfer Ratio (Min)	20% @ 10mA
Mounting Type	Through Hole
Package / Case	6-DIP
Packaging	Tube
Number of Circuits	1 - Single
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	4N35 000E 4N35000E 516 1557 5 ND 51615575ND 516-1557-5