5014BN

The MIC5014BN is designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The features of MIC5014BN are: (1)2.75V to 30V operation; (2)100A maximum supply current (5V supply); (3)15A typical off-state current; (4)Internal charge pump; (5)TTL compatible input; (6)Withstands 60V transient (load dump); (7)Reverse battery protected to -20V; (8)Inductive spike protected to -20V; (9)Overvoltage shutdown at 35V; (10)Internal 15V gate protection.

The following is about the absolute maximum ratings of MIC5014BN: (1)Supply Voltage: 20V to 60V; (2)Input Voltage: 20V to V+; (3)Source Voltage: 20V to V+; (4)Source Current: 50mA; (5)Gate Voltage: 20V to 50V; (6)Junction Temperature: 150°C.

The electrical characteristics of the MIC5014BN are: (1)Supply Current: 10 A typ and 25 A max at VIN De-Asserted,  5.0mA typ and 10mA max at VIN Asserted; (2)Logic Input Voltage Threshold: 0.8V max at Digital Low Level, 2.0V min at Digital High Level, 3.0V V+ 30V, TA = 25°C 2.0 V; (3)Input Capacitance: 5.0 pF; (4)Gate Enhancement VGATE VSUPPLY: 4.0V min and 17V max at 3.0V V+ 30V, VIN Asserted; (5)Zener Clamp VGATE VSOURCE: 13V min, 15V typ and 17V max at 8.0V V+ 30V, VIN Asserted.