50N06 Selling Leads, Price trend, 50N06 DataSheet download, circuit diagram from SeekIC.com

Features: * RDS(ON) = 23m@VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer Capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* Improved dv/dt capabilityApplicationSpecifications PARAMETER SYMBOL RATINGS UNIT Dr...

See larger image

SeekIC No. : 004232188 Detail

50N06: Features: * RDS(ON) = 23m@VGS = 10 V* Ultra low gate charge ( typical 30 nC )* Low reverse transfer Capacitance ( CRSS = typical 80 pF )* Fast switching capability* 100% avalanche energy specified* ...

50N06 Data Sheet

Get Latest Price

Part Number:: 50N06
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

* R_DS(ON) = 23m@V_GS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer Capacitance ( C_RSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability

Application

Connection Diagram

Specifications

PARAMETER		SYMBOL	RATINGS	UNIT
Drain-Source Voltage		V_DSS	60	V
Gate to Source Voltage		V_GSS	±20	V
Continuous Drain Current	T_C = 25	I_D	50	A
	T_C= 100
Drain Current Pulsed (Note 1)			35	A
Single Pulsed Avalanche Energy (Note 2)		I_DM	200	A
Repetitive Avalanche Energy (Note 1)		E_AS	480	mJ
Peak Diode Recovery dv/dt (Note 3)		E_AR	13	mJ
Total Power Dissipation (T_C = 25)		dv/dt	7	V/ns
Derating Factor above 25		P_D	130	W
			0.9	W/
Operation Junction Temperature		T_J	-55 ~ +150
Storage Temperature		T_STG	-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Description

The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt.

50N06 is mainly suitable electronic ballast, and low power switching mode power appliances.

Customers Who Bought This Item Also Bought

50N024-09P
US $$5.00 - 5.00 / Piece

Supply Ability:500Day

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

50N06

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Capacitors(4587)

Circuit Protection(3850)

Switches(5620)

Hardware, Fasteners, Accessories(2239)

Audio Products(940)

Sensors, Transducers(2877)