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50N035

Features: • Critical DC Electrical parameters specified at elevated Temp. • Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser • Super high density cell design for extremely low RDS (ON) VDSS = 30V RDS (ON) = 0.013 Ω ID...

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SeekIC No. : 004232187 Detail

50N035: Features: • Critical DC Electrical parameters specified at elevated Temp. • Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser •...

50N035 Data Sheet

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Part Number:
50N035
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  Critical DC Electrical parameters specified at elevated Temp.
•  Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser 
•  Super high density cell design for extremely low RDS (ON) 
    VDSS = 30V
    RDS (ON) = 0.013 Ω
    ID = 52A


Specifications

Symbol
Parameter
Max
Unit
ID
Drain Current
52
A
Continues
Pulsed
156
VDSS
Drain-Source Voltage
30
V
VGSV
Gate Source Voltage
±20
V
PD
Total Power Dissipation @ TC =25°C
50
W
Derate above 25°C
0.4
W/°C
TJ
Operating and Storage
-65 to 175
°C
TSTG
Temperature Range
 



Description

The Bay Linear n-channel power field effect transistors 50N035 are produced using high cell density DMOS technology. These 50N035 are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. 
 
The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts




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