Features: · Double-data-rate architecture·Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)·Programmable Read Latency 2,2,5 (clock)·Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & interleave)· Edge aligned data output, center aligned data inpu...
512MB-64Mx64: Features: · Double-data-rate architecture·Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)·Programmable Read Latency 2,2,5 (clock)·Programmable Burst Length (2,4,8)· Progr...
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Parameter |
Symbol |
Value |
Units |
Voltage on any pin relative to VSS |
VIN, VOUT |
-0.5 to 3.6 |
V |
Voltage on VCC supply relative to VSS |
VCC, VCCQ |
-1.0 to 3.6 |
V |
Storage Temperature |
TSTG |
-55 to +150 |
|
Power Dissipation |
PD |
8 |
W |
Short Circuit Current |
IOS |
50 |
mA |
The W3EG6465S is a 64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component.
The module W3EG6465S consists of eight 64Mx8 DDR SDRAMs in 66 pin TSOP package mounted on a 200 Pin FR4 substrate. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths of W3EG6465S allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.