5SMX 12M6500

Features: SpecificationsDescription The 5SMX 12M6500 is designed as IGBT Die. 5SMX 12M6500 has four features.The first one is that it would have low loss, rugged SPT technology.The second one is that it would have smooth switching for good EMC.The third one is that it would have large bondable emi...

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SeekIC No. : 004234644 Detail

5SMX 12M6500: Features: SpecificationsDescription The 5SMX 12M6500 is designed as IGBT Die. 5SMX 12M6500 has four features.The first one is that it would have low loss, rugged SPT technology.The second one is tha...

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Part Number:
5SMX 12M6500
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:






Specifications






Description

      The 5SMX 12M6500 is designed as IGBT Die.
      5SMX 12M6500 has four features.The first one is that it would have low loss, rugged SPT technology.The second one is that it would have smooth switching for good EMC.The third one is that it would have large bondable emitter area.The fourth one is about its passivation which means SIPOS and silicon nitride plus polyimide.That are all the features.
      Some maximum rated values about 5SMX 12M6500 have been concluded into several points as follow.The first one is about its collector emitter voltage which would be max 6500V with condition of Vge= 0 V.The second one is about its DC collector current which would be max 25A.The third one is about its peak collector current which would be max 50A limited by Tvjmax.The fourth one is about its gate emitter voltage which would be min -20 and max 20 V.The fifth one is about its IGBT short circuit SOA which would be max 10 s with condition of Vcc= 4400 V, Vcem <= 6500 V, Vge<= 15 V, Tvj<= 125 °C.The sixth one is about its junction temperature which would be from -40 to 125 °C.Something should be noted that maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9.
      Also there are some important IGBT characteristic values about 5SMX 12M6500.The first one is about its collector to emitter breakdown voltage which would be min 6500V with condition of Vge= 0 V, Ic= 1 mA, Tvj = 25 °C.The second one is about its collector to emitter saturation voltage which would be typ 4.2V with condition of Ic= 25 A, Vge= 15 V, Tvj=25°C and would be typ 5.4V with condition of Ic= 25 A, Vge= 15 V, Tvj=125°C.The third one is about its collector cut-off current which would be typ 10 A with condition of Vce= 6500 V, Vge= 0 V, Tvj=25°C and would be max 4000 A with condition of Vce= 6500 V, Vge= 0 V, Tvj=125°C.The fourth one is about its gate leakage current which would be min -200nA and max 200nA with condition of Vce= 0 V, Vge= ±20 V, Tvj= 125 °C.The sixth one is about its gate-emitter threshold voltage which would be min 6V and max 8V with condition of Ic= 10 mA, Vce= Vge, Tvj= 25 °C.And so on.For more information about 5SMX 12M6500 please contact us.






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