5SMX 12N4507

      The 5SMX 12N4507 is designed as IGBT Die.
      5SMX 12N4507 has four features.The first one is that it would have low loss, rugged SPT technology.The second one is that it would have smooth switching for good EMC.The third one is that its emitter metallisation would be optimized for press-pack packaging.The fourth one is about its passivation which means SIPOS and silicon nitride plus polyimide.That are all the features.
      Some maximum rated values about 5SMX 12N4507 have been concluded into several points as follow.The first one is about its collector emitter voltage which would be max 4500V with condition of Vge= 0 V.The second one is about its DC collector current which would be max 40A.The third one is about its peak collector current which would be max 80A limited by Tvjmax.The fourth one is about its gate emitter voltage which would be min -20 and max 20 V.The fifth one is about its IGBT short circuit SOA which would be max 10 s with condition of Vcc= 3400 V, Vcem <= 4500 V, Vge<= 15 V, Tvj<= 125 °C.The sixth one is about its junction temperature which would be from -40 to 125 °C.Something should be noted that maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9.
      Also there are some important IGBT characteristic values about 5SMX 12N4507.The first one is about its collector to emitter breakdown voltage which would be min 4500V with condition of Vge= 0 V, Ic= 1 mA, Tvj = 25 °C.The second one is about its collector to emitter saturation voltage which would be typ 3.0V with condition of Ic= 40 A, Vge= 15 V, Tvj=25°C and would be typ 4.0V with condition of Ic= 40 A, Vge= 15 V, Tvj=125°C.The third one is about its collector cut-off current which would be max 100 A with condition of Vce= 4500 V, Vge= 0 V, Tvj=25°C and would be typ 2500A with condition of Vce= 4500 V, Vge= 0 V, Tvj=125°C.The fourth one is about its gate leakage current which would be min -500nA and max 500nA with condition of Vce= 0 V, Vge= ±20 V, Tvj= 125 °C.The sixth one is about its gate-emitter threshold voltage which would be min 5.5V and max 7.5V with condition of Ic= 10 mA, Vce= Vge, Tvj= 25 °C.And so on.For more information about 5SMX 12N4507 please contact us.