74ABTH16373B

Features:

*16-bit transparent latch
*Multiple VCC and GND pins minimize switching noise
*Power-up 3-State
*Live insertion/extraction permitted
*Power-up reset
*3-State output buffers
*74ABTH16373B incorporates bus-hold data inputs which eliminate the need for external pull-up resistors to hold 
  unused inputs
*Output capability: +64mA/32mA
*ICCL 19 mA maximum
*Latch-up protection exceeds 500mA per JEDEC Std 17
*ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model 


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
VCC	DC supply voltage		0.5 to +7.0	V
IIK	DC input diode current	VI < 0	18	mA
VI	DC input voltage3		1.2 to +7.0	V
IOK	DC output diode current	V O< 0	50	mA
VOUT	DC output voltage3	output in Off or High state	0.5 to +5.5	V
IOUT	DC outpputut current	output in Low state	128	mA
		output in High state	64
Tstg	Storage temperature range		65 to 150	°C

Description

The 74ABTH16373B high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and  high output drive.

The 74ABTH16373B device is a dual octal transparent latch coupled to two sets of eight 3-State output  buffers. The two sections of the device are controlled independently by Enable (nE) and Output Enable (nOE) control gates.

The data on each set of D inputs are transferred to  the latch outputs when the Latch Enable (nE) input is High. The latch remains transparent to the data inputs while nE is High, and stores the data that is present one setup time before the High-to-Low enable transition.

The 3-State output buffers of the 74ABTH16373B are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. Each active-Low Output Enable (nOE) controls eight 3-State buffers independent of the latch operation.