Features: `Wide supply voltage range from 0.8 V to 3.6 V`High noise immunity`Complies with JEDEC standards:`JESD8-12 (0.8 V to 1.3 V)`JESD8-11 (0.9 V to 1.65 V)`JESD8-7 (1.2 V to 1.95 V)`JESD8-5 (1.8 V to 2.7 V)`JESD8-B (2.7 V to 3.6 V)`ESD protection:`HBM JESD22-A114-C exceeds 2000 V`MM JESD22-A1...
74AUP1G17: Features: `Wide supply voltage range from 0.8 V to 3.6 V`High noise immunity`Complies with JEDEC standards:`JESD8-12 (0.8 V to 1.3 V)`JESD8-11 (0.9 V to 1.65 V)`JESD8-7 (1.2 V to 1.95 V)`JESD8-5 (1....
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| Symbol | Parameter | Conditions | Min | Max | Unit |
| Vcc | supply voltage | -0.5 | +4.6 | V | |
| VI | input voltage | - | -50 | V | |
| IIk | input clamping current | VI < -0.5 V*1 | -0.5 | +4.6 | V |
| IoK | output clamping current | VO < -0.5 V or VO > VCC + 0.5 V*1 | - | ±50 | mA |
| VO | output current | active mode | -0.5 | VCC + 0.5 | mA |
| Power-down mode | +4.6 | ||||
| IO | supply current | VO = 0 V to Vcc | -0.5 | ±20 | mA |
| ICC | ground current | - | -50 | mAc | |
| IANG | ground current | -50 | mA | ||
| Tstg | storage temperature | -65 | +150 | ||
| PTOT | total power dissipation | Tamb = -40 to +125 | 250 | mW |
The 74AUP1G17 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
The 74AUP1G17 ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
The 74AUP1G17 is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry of the 74AUP1G17 disables the output, preventing the damaging backflow current through the device when it is powered down.
The 74AUP1G17 provides the single Schmitt-trigger buffer. It is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.