Features: ` HIGH SPEED: tPD = 5.3ns (TYP.) at VCC = 3.3 V` COMPATIBLE WITH TTL OUTPUTS` LOW POWER DISSIPATION: ICC = 2A (MAX.) at TA=25°C` LOW NOISE: VOLP = 0.3V (TYP.) at VCC = 3.3V` 75 TRANSMISSION LINE DRIVING CAPABILITY` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 12mA (MIN) at VCC = 3.0 V` PC...
74LVQ10: Features: ` HIGH SPEED: tPD = 5.3ns (TYP.) at VCC = 3.3 V` COMPATIBLE WITH TTL OUTPUTS` LOW POWER DISSIPATION: ICC = 2A (MAX.) at TA=25°C` LOW NOISE: VOLP = 0.3V (TYP.) at VCC = 3.3V` 75 TRANSMISSIO...
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` HIGH SPEED: tPD = 5.3ns (TYP.) at VCC = 3.3 V
` COMPATIBLE WITH TTL OUTPUTS
` LOW POWER DISSIPATION: ICC = 2A (MAX.) at TA=25°C
` LOW NOISE: VOLP = 0.3V (TYP.) at VCC = 3.3V
` 75 TRANSMISSION LINE DRIVING CAPABILITY
` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 12mA (MIN) at VCC = 3.0 V
` PCI BUS LEVELS GUARANTEED AT 24 mA
` BALANCED PROPAGATION DELAYS: tPLH tPHL
` OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 3.6V (1.2V Data Retention)
` PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 10
` IMPROVED LATCH-UP IMMUNITY
SYMBOL | PARAMETER | Value | UNIT |
VCC | Supply voltagee | 0.5 to+ 7 | V |
VI | DC Input Voltage | -0.5 to VCC + 0.5 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | ± 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | ± 50 | mA |
ICC or IGND | DC VCC or Ground Current | ± 200 | mA |
Tstg | Storage temperature | 65 to 150 | |
TL |
Lead Temperature (10 sec) | 300 |
The 74LVQ10 is a low voltage CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOStechnology. It is ideal for low power and low noise 3.3V applications.
The internal circuit of the 74LVQ10 is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.