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75N75

Features: * RDS(ON) = 12.5mΩ @VGS = 10 V* Ultra low gate charge ( typical 90 nC )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggednessSpecifications PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 75 V Continuous Dra...

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SeekIC No. : 004252226 Detail

75N75: Features: * RDS(ON) = 12.5mΩ @VGS = 10 V* Ultra low gate charge ( typical 90 nC )* Fast switching capability* Avalanche energy Specified* Improved dv/dt capability, high ruggednessSpecificatio...

75N75 Data Sheet

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Part Number:
75N75
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

* RDS(ON) = 12.5mΩ @VGS = 10 V
* Ultra low gate charge ( typical 90 nC )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness


Specifications

PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS 75 V
Continuous Drain Current TC = 25 .. ID 75 A
TC = 100 .. 56 A
Drain Current Pulsed (Note 1) IDM 300 A
Gate to Source Voltage VGS ±20 V
Avalanche Energy Single Pulsed (Note 2) EAS 300 mJ
Repetitive (Note 1) EAR 900 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns
Total Power Dissipation TC = 25 .. PD 220 W
Derating above 25 .. 1.4 W/..
Junction Temperature TJ +150 ..
Storage Temperature TSTG -55 ~ +150 ..


Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.




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