89C1632

Features:

Four 512k x 8 SRAM architecture
R_AD-P_AK® technology hardens against natural space radiation technology
Total dose hardness:
- > 100 krad (Si), depending upon space mission
Excellent Single Event Effects:
- SEL > 101MeV-cm²/mg
- SEU threshold = 3 MeV-cm²/mg
- SEU saturated cross section: 6E-9 cm²/bit
Package: 68-pin quad flat package
Fast access time: 20, 25 and 30 ns
Completely static memory - no clock or timing strobe required
Internal bypass capacitor
High-speed silicon-gate CMOS technology
5V or 3V !à 10% power suppl
Equal address and chip enable access times
Three-state outputs
All inputs and outputs are TTL compatible


Specifications

Description

Maxwell Technologies! 89C1632 high-performance 16 Mega bit Multi-Chip Module (MCM) Static Random Access Memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The four 4-Megabit SRAM die and bypass capacitors are incorporated into a high-reliable hermetic quad flat-pack ceramic package. With high-perfor- mance silicon-gate CMOS technology, the 89C1632 reduces power consumption and eliminates the need for external clocks or timing strobes. 89C1632 is equipped with output enable (OE ) and four byte enable (CS1 - CS4) inputs to allow greater system flexibility. When OE input is high, the output is forced to high impedance.
Maxwell Technologies' 89C1632 patented R AD-PAK packaging technol- ogy incorporates radiation shielding in the microcircuit pack-age. In a GEO orbit, RAD-PAK provides true greater than 100 krad (Si) total radiation dose tolerance, dependent upon space mission. 89C1632 eliminates the need for box shielding while provid-ing the required radiation shielding for a lifetime in orbit or a space mission. 89C1632 is available with screening up to Maxwell Technologies self-defined Class K.