Features: ` RDS(ON) = 1.2 @VGS = 10 V
` Ultra low gate charge ( typical 28 nC )
` Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
` Fast switching capability
` Avalanche energy specified
` Improved dv/dt capability, high ruggednessSpecifications
|
PARAMETER |
SYMBOL |
RATINGS |
UNIT |
| Drain-Source Voltage |
8N60-A |
VDSS |
600 |
V |
| 8N60-B |
650 |
V |
| Gate-Source Voltage |
VGSS |
±30 |
V |
| Avalanche Current (Note 1) |
IAR |
7.5 |
A |
| Continuous Drain Current |
TC = 25°C |
ID |
7.5 |
A |
| TC = 100°C |
4.6 |
A |
| Pulsed Drain Current (Note 1) |
IDM |
30 |
A |
| Avalanche Energy |
Single Pulsed (Note 2) |
EAS |
230 |
mJ |
| Repetitive (Note 1) |
EAR |
14.7 |
mJ |
| Peak Diode Recovery dv/dt (Note 3) |
dv/dt |
4.5 |
V/ns |
| Power Dissipation |
TO-220 |
PD |
147 |
W |
| TO-220F |
48 |
W |
| Junction Temperature |
TJ |
+150 |
|
| Operating Temperature |
TOPR |
-55 ~ +150 |
|
| Storage Temperature |
TSTG |
-55 ~ +150 |
|
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.DescriptionThe UTC8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET UTC8N60 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
The 8N60 is the abbreviation of UTC8N60. This device is designed as the high voltage and high current power MOSFET that have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features of the UTC8N60 are:(1)improved dv/dt capability, high ruggedness;(2)avalanche energy specified;(3)fast switching capability;(4)low reverse transfer capacitance (CRSS=typical 12.0 pF);(5)ultra low gate charge (typical 28 nC);(6)RDS(ON)=1.2 @VGS=10 V.
The absolute maximum ratings of the UTC8N60 can be summarized as:(1)drain-source voltage:650 V;(2)gate-source voltage:±30 V;(3)avalanche current:7.5 A;(4)continuous drain current (Tc=25°C):7.5 A;(5)continuous drain current (Tc=100°C):4.6 A;(6)pulsed drain current:30 A;(7)avalanche energy single pulsed:230 mJ;(8)avalanche energy repetitive:14.7 mJ;(9)peak diode recovery dv/dt:4.5 V/ns;(10)power dissipation:147 W (TO-220) or 48 W (TO-220F);(11)junction temperature:+150 ;(12)storage temperature:-55 to +150 ;(13)operating temperature:-55 to +150 . If you want to know more information such as the electrical characteristics about the UTC8N60, please download the datasheet in www.seekic.com or www.chinaicmart.com .
8N60 Data Sheet
