Purchase A28F010, In-stock A28F010 From SeekIC.
- Table of contents:
A28F010
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Suppliers
DataSheet
General Description
A28F010 General Description
| Symbol | Type | Name and Function |
| A0A16 | INPUT | ADDRESS INPUTS for memory addresses. Addresses are internally latched during a write cycle. |
| DQ0DQ7 | INPUT/OUTPUT | DATA INPUT/OUTPUT: Inputs data during memory write cycles; outputs data during memory read cycles. The data pins are active high and float to tri-state OFF when the chip is deselected or the outputs are disabled. Data is internally latched during a write cycle. |
| CEÝ | INPUT | CHIP ENABLE: Activates the device's control logic, input buffers, decoders and sense amplifiers. CEÝ is active low; CEÝ high deselects the memory device and reduces power consumption to standby levels. |
| OEÝ | INPUT | OUTPUT ENABLE: Gates the devices output through the data buffers during a read cycle. OEÝ is active low. |
| WEÝ | INPUT | WRITE ENABLE: Controls writes to the control register and the array. Write enable is active low. Addresses are latched on the falling edge and data is latched on the rising edge of the WEÝ pulse. Note: With VPP s 6.5V, memory contents cannot be altered. |
| VPP | ERASE/PROGRAM POWER SUPPLY for writing the command register, erasing the entire array, or programming bytes in the array. | |
| VCC | DEVICE POWER SUPPLY (5V g10%) | |
| VSS | GROUND | |
| NC | NO INTERNAL CONNECTION to device. Pin may be driven or left floating. |
A28F010 Maximum Ratings
Operating Temperature
During Read - 40 to + 125(1)
During Erase/Program - 40 to + 125
Temperature Under Bias - 40 to + 125
Storage Temperature - 65 to a150
Voltage on Any Pin with
Respect to Ground - 2.0V to + 7.0V(2)
Voltage on Pin A9 with
Respect to Ground - 2.0V to + 13.5V(2, 3)
VPP Supply Voltage with
Respect to Ground
During Erase/Program - 2.0V to + 14.0V(2, 3)
VCC Supply Voltage with
Respect to Ground - 2.0V to a7.0V(2)
Output Short Circuit Current 100 mA(4)
Maximum Junction Temperature (TJ) +140
A28F010 Features
Automotive Temperature Range:
-40§Cto a125§C
Flash Memory Electrical Chip-Erase
1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 ms Typical Byte-Program
2 Second Chip-Program
1,000 Erase/Program Cycles Minimum over Automotive Temperature Range
12.0V g5% VPP
High-Performance Read
120 ns Maximum Access Time
CMOS Low Power Consumption
30 mA Maximum Active Current
300 mA Maximum Standby Current
Integrated Program/Erase Stop Timer
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
Noise Immunity Features
g10% VCC Tolerance
Maximum Latch-Up Immunity through EPI Processing
ETOXTM III Flash Nonvolatile Memory
Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
JEDEC-Standard Pinouts
32-Pin Plastic DIP
32-Lead PLCC
-40§Cto a125§C
Flash Memory Electrical Chip-Erase
1 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 ms Typical Byte-Program
2 Second Chip-Program
1,000 Erase/Program Cycles Minimum over Automotive Temperature Range
12.0V g5% VPP
High-Performance Read
120 ns Maximum Access Time
CMOS Low Power Consumption
30 mA Maximum Active Current
300 mA Maximum Standby Current
Integrated Program/Erase Stop Timer
Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
Noise Immunity Features
g10% VCC Tolerance
Maximum Latch-Up Immunity through EPI Processing
ETOXTM III Flash Nonvolatile Memory
Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
JEDEC-Standard Pinouts
32-Pin Plastic DIP
32-Lead PLCC
A28F010
PDF/DataSheet Download
- Datasheet: A28F010
- File Size: 307623 KB
- Manufacturer: INTEL [Intel Corporation]
- Click here to Download
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